GlobalFoundries, a major wafer foundry, recently announced that it has signed a technology licensing agreement with TSMC to introduce its 650V and 80V gallium nitride (GaN) technology to strengthen GlobalFoundries' layout in the field of power applications, especially targeting high-power markets such as data centers, industry, and automobiles.
GlobalFoundries stated that it plans to verify this licensed GaN technology at its wafer fab in Burlington, Vermont, which specializes in processing high-voltage GaN-on-Silicon technology. In addition, according to the plan, the development of related technologies is expected to start in early 2026, and production is expected to begin in the second half of 2026. GlobalFoundries emphasized that this licensing agreement will accelerate its ability to mass-produce next-generation power devices for customers and manufacture them in the United States.
In fact, gallium nitride technology is increasingly attracting attention from the industry because of its superior performance compared to traditional silicon CMOS technology. Because it can provide higher efficiency, higher power, and density, it can effectively solve the performance limitations of traditional silicon-based technology in power systems.
As for GlobalFoundries, it is actively developing gallium nitride products, with applications including electric vehicles (EVs), data centers, renewable energy systems, fast charging electronic products, etc. "This agreement reinforces GlobalFoundries' commitment to innovation and strategic focus on differentiated technologies that are critical to the essential power devices we use to live, work and connect," said Téa Williams, senior vice president of GlobalFoundries' power business.
GlobalFoundries' emphasis on the reliability of gallium nitride covers process development, component performance and application integration to ensure that products can adapt to harsh working environments.